onsemi FDD6632
$ 0.143
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-06-06
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
Diodes Inc.DMG4800LK3-13
Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
描述
由其分销商提供的 onsemi FDD6632 的描述。
15W(Tc) 3V@ 250µA 4nC@ 5V 1individualNChannel 30V 70mΩ@ 9A,10V 255pF@15V D-PAK，TO-252 SMD mount
30V N-Channel Logic Level UltraFET Trench Power MOSFET
TO-252, SINGLE, N-CH, 30V, 90MOHM LL ULTRAFET TRENCH PWR MOS
Trans MOSFET N-CH 30V 9A 3-Pin(2+Tab) DPAK T/R
MOSFETs 30V, 9a 0.090Ohms/VGS=10V
Power Field-Effect Transistor, 4A I(D), 30V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:9A; Resistance, Rds On:0.058ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:DPAK; Termination Type:SMD; No. of Pins:2; Power Dissipation:15mW; Voltage, Vds Max:30V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Current Rating9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance255 pF
Max Operating Temperature175 °C
Max Power Dissipation15 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation15 W
Rds On Max70 mΩ
Rise Time41 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)30 V