Infineon IPD090N03LGATMA1

N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

MOSFET, N CH, 40A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V;

Mosfet, N Channel, 30V, 40A, To-252; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.0075Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPD090N03L G

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42