onsemi FDD6530A

Name: onsemi FDD6530A
Brand: onsemi
SKU: FDD6530A

N-Channel PowerTrench® MOSFET, 20V, 21A, 32mΩ

$ 0.589

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Verical		FDD6530A	3,457	476					0.654	0.583
Rochester Electronics		FDD6530A	3,475					0.630	0.523	0.466	15m
Farnell	2	FDD6530A	0	1	Cut Tape	1.062*	0.854*	0.587*	0.394*	0.373*	1d
Win Source		WS-FDD6530A	16,615	50				1.251	0.834	0.834	1h
Worldway Electronics		FDD6530A	26,384	7	Tape & Reel		0.154	0.149	0.141	0.141	1d

数据表和文档

下载 onsemi FDD6530A 的数据表和制造商文档。

IHS

Datasheet6 页4 年前

Datasheet0 页0 年前

Future Electronics

onsemi

Fairchild Semiconductor

iiiC

库存历史记录

3 个月趋势:

-30.15%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDD6530A 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-06-29

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2021-02-17

LTD Date2021-08-17

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDD6530A 的描述。

N-Channel PowerTrench® MOSFET, 20V, 21A, 32mΩ

onsemi

Single N-Channel 20 V 48 mOhm 9 nC 33 W PowerTrench SMT Mosfet - TO-252-3

Future Electronics

Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 21A, 20V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Po

Farnell

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Fairchild Semiconductor