onsemi FDD5N60NZTM

Name: onsemi FDD5N60NZTM
Brand: onsemi
SKU: FDD5N60NZTM

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

$ 0.587

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Distributor		SKU		Min	Pkg
Newark	2	FDD5N60NZTM	4,063	1	Cut Tape	1.900	1.270	0.908	0.704	0.704
Verical		FDD5N60NZTM	2,200	495					0.630	0.562
Future Electronics	2	FDD5N60NZTM	2,500	2500	Tape & Reel					0.485
Rochester Electronics		FDD5N60NZTM	2,201					0.607	0.504	0.449	31m
DigiKey	3	FDD5N60NZTMCT-ND	35,873	1	Cut Tape	1.900	1.210	0.812	0.587	0.587

数据表和文档

下载 onsemi FDD5N60NZTM 的数据表和制造商文档。

Upverter

Technical Drawing1 页3 年前

IHS

Master Electronics

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-36.55%

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此零件

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onsemiFDD5N60NZTM

onsemiNDD04N60ZT4G

Price @ 1000

$ 0.587

$ 0.86

Stock

893,700

1,149,217

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

4 A

2.6 A

Threshold Voltage

3.9 V

Rds On Max

2 Ω

Gate to Source Voltage (Vgs)

25 V

30 V

Power Dissipation

83 W

Input Capacitance

600 pF

640 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-09-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDD5N60NZTM 的描述。

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

onsemi

UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

Newark

Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

Farnell

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor