onsemi FDD3510H

Name: onsemi FDD3510H
Brand: onsemi
SKU: FDD3510H

Trans Mosfet N/p-ch 80V 4.3A/2.8A 5-PIN(4+TAB) Dpak T/r / Mosfet N/p-ch 80V 4.3A/2.8A Dpak

$ 0.666

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Verical	2	FDD3510H	1,600	421				0.740	0.660
Rochester Electronics		FDD3510H	28,590				0.713	0.592	0.528	2h
element14 APAC	2	FDD3510H	0	5	Cut Tape	1.625*	1.262*	0.892*	0.892*	15h
Farnell	2	FDD3510H	0	5	Cut Tape	1.636*	1.273*	0.894*	0.894*	1h
Microchip USA		FDD3510H	371	3500					0.415	20h

数据表和文档

下载 onsemi FDD3510H 的数据表和制造商文档。

IHS

Datasheet11 页4 年前

Datasheet0 页0 年前

Upverter

Future Electronics

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-0.69%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-05-07

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2021-12-24

LTD Date2021-12-24

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FDD3510H 的描述。

Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R / MOSFET N/P-CH 80V 4.3A/2.8A DPAK

Win Source

Transistor MOSFET Array N/P-CH 80V 13.9A 5-Pin DPAK T/R

Avnet

Dual N/P-Channel 80 V 80 mOhm Surface Mount PowerTrench Mosfet TO-252-5

Future Electronics

Power Field-Effect Transistor, 4.3A I(D), 80V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N/P-CH, 80V, 13.9A, TO-252 -5; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 13.9A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage

Farnell

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor