供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-07-06
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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描述
由其分销商提供的 onsemi FDC3535 的描述。
P-Channel 80 V 2.1 A 183 mO Surface Mount PowerTrench Mosfet - SUPERSOT-6
MOSFET P-CH 80V 6-SSOT / Trans MOSFET P-CH 80V 2.1A 6-Pin TSOT-23 T/R
P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ
Small Signal Field-Effect Transistor, 2.1A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
1.6W(Ta) 20V 3V@ 250µA 20nC@ 10 V 1individualPChannel 80V 183mΩ@ 2.1A,10V 2.1A 880pF@40V SSOT-6 SMD mount 2.9mm*1.6mm*1mm
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, P CH, -80V, -2.1A, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.147ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance183 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance880 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max183 mΩ
Rise Time3.1 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time23 ns
Turn-On Delay Time6.5 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm