onsemi FDC638P

Transistor MOSFET P-Channel 20V 4.5A (4500mA) 1.6W (Ta) Surface Mount SuperSOT-6
$ 0.203
Production

价格与库存

数据表和文档

下载 onsemi FDC638P 的数据表和制造商文档。

IHS

Datasheet7 页2 年前
Datasheet7 页24 年前

Upverter

element14 APAC

onsemi

Newark

库存历史记录

3 个月趋势:
-19.77%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDC638P 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
EE Concierge
符号封装
SnapEDA
符号封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

相关零件

onsemiFDC602P
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ
onsemiSI3442DV
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemiFDC638APZ
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ
onsemiFDC604P
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ
Diodes Inc.DMP2066LVT-7
Trans MOSFET P-CH 20V 4.5A Automotive 6-Pin SOT-26 T/R
Diodes Inc.DMP2066LVT-13
Trans MOSFET P-CH 20V 4.5A Automotive 6-Pin SOT-26 T/R

描述

由其分销商提供的 onsemi FDC638P 的描述。

Transistor MOSFET P-Channel 20V 4.5A (4500mA) 1.6W (Ta) Surface Mount SuperSOT-6
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ
ON SEMICONDUCTOR - FDC638P - MOSFET Transistor, P Channel, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -800 mV
P-CHANNEL 2.5V POWERTRENCH SPECIFIED MOSFET Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:1.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC638P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

制造商别名

onsemi 在全球拥有多个品牌,分销商可将其用作替代名称。onsemi 也可称为以下名称:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

零件编号别名

该零件可能有以下备用零件编号:

  • FDC638P.