备用零件
Price @ 1000
$ 2.048
Stock
98,369
260,418
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
34 A
34 A
Threshold Voltage
-
1.6 V
Rds On Max
1.9 mΩ
1.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
11.4 nF
11.4 nF
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-09
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDB8832-F085 的描述。
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
TAPE REEL / 30V, 80A, 2.1 OHMS, NCH LOGIC LEVEL POWER TRENCH MOSFET
Compliant Surface Mount 1.31247 g 38 ns 73 ns 1.9 mΩ TO-263-3 3
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB8832_F085 Fairchild/ON Semiconductor
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max1.9 mΩ
Rise Time73 ns
Turn-Off Delay Time54 ns
Turn-On Delay Time24 ns