供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIRF2903ZSTRLP
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(2+Tab) D2PAK T/R / HEXFET Power MOSFET
描述
由其分销商提供的 onsemi FDB6670AS 的描述。
MOSFET N-CH 30V 62A TO-263AB
Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
30V,NCH, SINGLE,TO263, POWER TRENCH SYNCFET<AZ
MOSFETs 30V N-Channel PT SyncFET
30V N-Channel PowerTrench SyncFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)62 A
Current Rating31 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.57 nF
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation62.5 W
Rds On Max8.5 mΩ
Rise Time16 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)30 V