onsemi FDB14AN06LA0
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
相关零件
InfineonAUIRF1010EZS
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 onsemi FDB14AN06LA0 的描述。
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ | MOSFET N-CH 60V 67A TO-263AB
Power Field-Effect Transistor, 10A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 60V N-Ch PowerTrench MOSFET
MOSFET N-CH 60V 10A/67A TO263AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Current Rating60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max11.6 mΩ
Rise Time169 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V