onsemi FCPF380N60E

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F

Single N-Channel 600 V 31 W 45 nC Silicon Through Hole Mosfet - TO-220-3

Power Field-Effect Transistor, 10.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

FAIRCHILD SEMICONDUCTOR FCPF380N60E MOSFET, N-CH, 600V, 10.2A, TO-220F

Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Tube

MOSFET, N-CH, 600V, 10.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.