onsemi DTC115EET1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

NPN Bipolar Digital Transistor (BRT)

DTC115EET1G NPN DIGITAL TRANSISTOR, 100MA 50 V 100 KOHM, RATIO OF 1, 3-PIN SC-75

250mV@ 300¦ÌA,10mA NPN - Pre-Biased 300mW 6V 500nA 50V 100mA SC-75,SOT-416 1.6mm*800¦Ìm*750¦Ìm

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

TRANS, NPN, 50V, 0.1A, SC-75; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:100kohm; Base-Emitter Resistor R2:100kohm; Resis

Brt Transistor, 50V, 100K/100Kohm, Sc-75; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:100Kohm; Resistor R2 Base-Emisor:100Kohm; Ratio De La Resistencia, R1/R2:1 |Onsemi DTC115EET1G

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.