供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi BU406G 的描述。
BU Series 200 V 7 mA Flange Mount NPN Power Transistor - TO-220AB
Trans GP BJT NPN 200V 7A 60000mW 3-Pin(3+Tab) TO-220AB Tube
NPN POWER TRANSISTOR Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT 7A 200V 60W NPN
TRANSISTOR, BIPOL, NPN, 200V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 60W; DC Collector Current: 7A; DC Current Gain hFE: 10hFE; Trans
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)400 V
Collector Emitter Breakdown Voltage200 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)200 V
Current Rating7 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency10 MHz
Gain Bandwidth Product10 MHz
hFE Min10
Max Collector Current7 A
Max Frequency10 MHz
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation60 W
Schedule B8541290080
Transition Frequency10 MHz
Voltage Rating (DC)200 V
Dimensions
Height6.35 mm
Length31.75 mm
Width12.7 mm