onsemi BSS84LT1G

Name: onsemi BSS84LT1G
Brand: onsemi
SKU: BSS84LT1G

BSS84L: Small Signal MOSFET 50V 130mA 10 Ohm Single P-Channel SOT-23 Logic Level

$ 0.076

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	3	BSS84LT1G	894,000	3K						0.032	1d
Newark	3	BSS84LT1G	19,261	1	Cut Tape	0.031	0.031	0.031	0.031	0.031
Arrow Electronics	2	BSS84LT1G	3,000	1		0.293	0.177	0.111	0.072	0.047
Verical	3	BSS84LT1G	177,000	3K						0.036
Future Electronics	2	BSS84LT1G	606,000	3K	Tape & Reel					0.038

数据表和文档

下载 onsemi BSS84LT1G 的数据表和制造商文档。

Master Electronics

Datasheet4 页0 年前

IHS

Upverter

element14 APAC

Newark

库存历史记录

3 个月趋势:

+207%

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onsemiBSS84LT1G

Diodes Inc.BSS84-7-F

Price @ 1000

$ 0.076

$ 0.061

Stock

23,950,957

22,575,254

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

-50 V

Continuous Drain Current (ID)

130 mA

Threshold Voltage

-2 V

-800 mV

Rds On Max

10 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

225 mW

300 mW

Input Capacitance

30 pF

45 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-01-15

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi BSS84LT1G 的描述。

BSS84L: Small Signal MOSFET 50V 130mA 10 Ohm Single P-Channel SOT-23 Logic Level

North Star Micro

ON SEMICONDUCTOR - BSS84LT1G - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

Utmel Electronic

P-Channel Power MOSFET, Logic Level, -50 V, -130mA, 10Ω

onsemi

MOSFET, POWER, P-CH, VDSS 50VDC, RDS(ON) 5 OHMS, ID 130MA, SOT-23 (TO-236),PD 225MW

RS (Formerly Allied Electronics)

ON Semiconductor BSS84LT1G MOSFET 1 P-channel SOT-23 Tape on Full reel

Rapid Electronics

POWER MOSFET SINGLE P-CHANNEL SOT-23 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

ComSIT Distribution GmbH

PFET SOT23 50V 130MA 10.0; Transistor Polarity: P Channel; Continuous Drain Current Id: 130µA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip

Farnell

P Channel Mosfet, -50V, 130Ma, Sot-23; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:130Ma; Tensión Drenaje-Fuente Vds:50V; Resistencia De Activación Rds(On):10Ohm; Tensión Vgs De Medición Rds(On):5V |Onsemi BSS84LT1G

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = -5 / Fall Time ns = 1.7 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 1.2 / Turn-ON Delay Time ns = 3.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 225

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