备用零件
此零件
备用零件
Price @ 1000
$ 0.116
Stock
837,162
523,164
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
200 mA
100 mA
Transition Frequency
60 MHz
100 MHz
Collector Emitter Saturation Voltage
200 mV
200 mV
hFE Min
20
20
Power Dissipation
350 mW
250 mW
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-02-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
Diodes Inc.MMBTA06-7-F
Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.MMBTA05-7-F
Bipolar (BJT) Single Transistor, NPN, 60 V, 500 mA, 350 mW, SOT-23, Surface Mount
Diodes Inc.BC846B-7-F
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 300 mW, SOT-23, Surface Mount
描述
由其分销商提供的 onsemi BSS64 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage PNP Bipolar Transistor. ONSSPCTRNSTVU6M5P;
Trans GP BJT NPN 80V 0.2A 3-Pin SOT-23 T/R
This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency60 MHz
Gain Bandwidth Product60 MHz
hFE Min20
Max Breakdown Voltage80 V
Max Collector Current200 mA
Max Frequency60 MHz
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency60 MHz
Voltage Rating (DC)-80 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm