备用零件
Price @ 1000
$ 0.352
$ 0.334
$ 0.334
Stock
150,762
269,615
269,615
Authorized Distributors
6
5
5
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-126
TO-126
TO-126
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
32 V
32 V
32 V
Max Collector Current
4 A
4 A
4 A
Transition Frequency
3 MHz
3 MHz
3 MHz
Collector Emitter Saturation Voltage
-200 mV
-200 mV
-200 mV
hFE Min
50
50
50
Power Dissipation
36 W
36 W
36 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-01-07
LTD Date2022-07-07
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
描述
由其分销商提供的 onsemi BD436STU 的描述。
6.0 A, 100 V PNP Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 32V 4A 3-Pin(3+Tab) TO-126 Rail
TRANS, PNP, 32V, 4A, 150DEG C, 36W; Available until stocks are exhausted
Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-32V; Transition Frequency Typ, ft:3MHz; Power Dissipation, Pd:36W; DC Collector Current:-4A; DC Current Gain Max (hfe):50; No. of Pins:3 ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-126
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight760.986249 mg
Technical
Collector Base Voltage (VCBO)-32 V
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage-200 mV
Collector Emitter Voltage (VCEO)32 V
Current4 A
Current Rating-4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min50
Max Collector Current4 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation36 W
Transition Frequency3 MHz
Voltage32 V
Voltage Rating (DC)-32 V
Dimensions
Height14.2 mm