备用零件
Price @ 1000
$ 0.263
$ 0.236
Stock
275,661
164,155
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-126-3
TO-126
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1.5 A
1.5 A
Transition Frequency
-
-
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
100
100
Power Dissipation
1.25 W
1.25 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi BD13916STU 的描述。
Bipolar Transistors (BJT); BD13916STU; ON SEMICONDUCTOR; NPN; 3; 80 V; 1.5 A
1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD13916 Series NPN 1.25 W 80 V 1.5 A Epitaxial Silicon Transistor - TO-126-3
80V 1.25W 100@150mA,2V 1.5A NPN TO-126-3 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
onsemi NPNTransistor, TO-126encapsulation, Through hole mounting, Maximum DC collector current1.5 A, maximum collector-emission voltage80 V
TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 100hFE; Transi
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Power Dissipation, Pd:125mW; DC Collector Current:1.5A; DC Current Gain Max (hfe):40; No. of Pins:3; Collector Emitter Saturation Voltage, Vce(sat):0.5V ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-126-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Collector Current1.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation12.5 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.25 W
Schedule B8541290080
Voltage Rating (DC)80 V
Dimensions
Height14.2 mm
Length8 mm
Width3.25 mm