备用零件
Price @ 1000
$ 0.031
$ 0.031
$ 0.031
Stock
1,289,456
764,072
764,072
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
650 mV
650 mV
650 mV
hFE Min
420
420
420
Power Dissipation
300 mW
-
-
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
描述
由其分销商提供的 onsemi BC858CLT3G 的描述。
ON Semi BC858CLT3G PNP Bipolar Transistor; 0.1 A; 30 V; 3-Pin SOT-23
BC856ALT1G Series 30 V 100 mA 300 mW PNP General Purpose Transistor - SOT-23
30V 225mW 90@10uA,5.0V 100mA PNP SOT-23 Bipolar (BJT) ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R
Bipolar Transistors - BJT 100mA 30V PNP
30V 225mW 100mA 520@2mA5V 100MHz 650mV@100mA5mA PNP -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
100 mA 30 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
onsemi PNPTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current-100 mA, maximum collector-emission voltage-30 V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation300 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)-30 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm