价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | BC848CLT1G | 1,080,000 | 3K | Tape & Reel | ||||||||
| Avnet | BC848CLT1G | 24,000 | 3K | 18h | ||||||||
| Newark | BC848CLT1G | 17,366 | 1 | Cut Tape | ||||||||
| Master Electronics | BC848CLT1G | 45,000 | 3K | |||||||||
| Onlinecomponents.com | BC848CLT1G | 45,000 | 3K | Bulk |
备用零件
Price @ 1000
$ 0.033
$ 0.051
$ 0.051
Stock
15,885,776
9,746,835
9,746,835
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
420
420
420
Power Dissipation
300 mW
310 mW
310 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiBC849CLT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
描述
由其分销商提供的 onsemi BC848CLT1G 的描述。
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE
Trans GP BJT NPN 30V 0.1A 300mW 3-Pin SOT-23 T/R
ON SEMI BC848CLT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SOT-23
Bipolar Transistors (BJT); BC848CLT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 100 mA
30V 300mW 420@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
BC848CLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23
100 mA, 30 V, NPN Bipolar Junction Transistor
ON Semiconductor BC848CLT1G Transistor NPN Maximum Voltage 30V Current 100mA
General Purpose Transistors NPN Silicon VCEO=30V VEBO=5V IC=100mA SOT23
Bipolar Transistors - BJT 100mA 30V NPN
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Transistor Cas
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage30 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation300 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm