价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | BC847BDW1T1G | 150,000 | 3K | Tape & Reel | ||||||||
| Avnet | 06R3467 | 16,867 | 1 | 18h | ||||||||
| Newark | BC847BDW1T1G | 16,867 | 1 | Cut Tape | ||||||||
| Verical | BC847BDW1T1G | 96,000 | 16305 | |||||||||
| Arrow Electronics | BC847BDW1T1G | 41,893 | 1 |
备用零件
Price @ 1000
$ 0.043
$ 0.041
$ 0.041
Stock
48,948,331
39,456,131
39,456,131
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-363-6
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
200
200
200
Power Dissipation
380 mW
380 mW
380 mW
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiBC847BPDW1T3G
100 Ma 45 V, Co-Packaged Npn And Pnp Bipolar Junction Transistor/ Reel |Onsemi BC847BPDW1T3G
onsemiBC847CDW1T1G
Bipolar Transistors (BJT); BC847CDW1T1G; ON SEMICONDUCTOR; NPN; 6; 45 V; 100 mA
描述
由其分销商提供的 onsemi BC847BDW1T1G 的描述。
Bipolar Transistors (BJT); BC847BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 45 V; 100 mA
Bipolar Transistor Array, General Purpose, Dual NPN, 45 V, 100 mA, 380 mW
ON SEMI BC847BDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SC-88
ON Semiconductor BC847BDW1T1G NPN bipolar transistor tape full reel
NPN DUAL GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
BC Series 45 V 100 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
45V 380mW 200@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
General Purpose Transistors Dual NPN Ic=100mA Vceo=45V hfe=200~450 P=380mW SOT363
100 mA 45 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Npn, Dual, 45V, Sot363, Full Reel; Transistor, Polaridad:Npn Doble; Tensión Colector Emisor V(Br)Ceo:45V; Disipación De Potencia Pd:380Mw; Corriente De Colector Dc:100Ma; Ganancia De Corriente Dc Hfe:450 |Onsemi BC847BDW1T1G
TRANSISTOR, NPN, 45V, 100MA, SOT-363-6; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
合规
环境分类
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
合规声明