onsemi BC639

Name: onsemi BC639
Brand: onsemi
SKU: BC639

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Obsolete

制造商页面数据表

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Distributor		SKU		Min
Avnet		BC639	0	8K						4h
Farnell	3	BC639	0	1	0.204*	0.204*	0.204*	0.204*	0.204*	1d
element14 APAC	2	BC639	0	1	0.205*	0.205*	0.205*	0.205*	0.205*	16h
Component Stockers USA		BC639	2,576		0.110	0.110	0.100	0.090	0.090	16h
Win Source		WS-BC639	9,650	1670					0.027	3h

数据表和文档

下载 onsemi BC639 的数据表和制造商文档。

Upverter

Datasheet4 页15 年前

Datasheet4 页19 年前

IHS

Fairchild Semiconductor

Jameco

Future Electronics

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onsemiBC639

onsemiBC639G

Price @ 1000

$ 0.063

Stock

7,273,364

200,916

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

500 mA

1 A

Transition Frequency

50 MHz

200 MHz

Collector Emitter Saturation Voltage

500 mV

hFE Min

Power Dissipation

1.5 W

625 mW

供应链

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1982-11-30

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2006-12-31

LTD Date2007-06-30

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi BC639 的描述。

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

IHS

Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-92 Box / TRANS NPN 80V 1A TO-92

Win Source

High Current NPN Bipolar Transistor

onsemi

TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic Max: 1.5A; Current Ic Continuous a Max: 1.5A; Current Ic hFE: 150mA; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: a; Power Dissipation Ptot Max: 625mW; Transistor Type: General Purpose; Voltage Vcbo: 100V

Farnell

Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:80V; DC Collector Current:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

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