备用零件
此零件
备用零件
Price @ 1000
$ 0.049
$ 0.025
Stock
659,247
160,769
Authorized Distributors
6
1
Mount
Surface Mount, Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
65 V
65 V
Max Collector Current
100 mA
100 mA
Transition Frequency
150 MHz
150 MHz
Collector Emitter Saturation Voltage
-90 mV
-250 mV
hFE Min
200
200
Power Dissipation
500 mW
500 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Bulk Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
描述
由其分销商提供的 onsemi BC556BTA 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
100 mA, 65 V PNP Bipolar Junction Transistor - Epitaxial Silicon
TRANSISTOR,BJT,PNP,80V V(BR)CEO,100MA I(C),TO-92 82C0491;
Trans GP BJT PNP 65V 0.1A 500mW 3-Pin TO-92 Fan-Fold
65V 500mW 100mA 200@2mA5V 150MHz 250mV@100mA5mA PNP +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight240.007063 mg
Technical
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage-90 mV
Collector Emitter Voltage (VCEO)65 V
Current1 A
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min200
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency150 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency150 MHz
Voltage65 V
Voltage Rating (DC)-65 V
Dimensions
Height8.77 mm
Length4.58 mm
Width3.86 mm