onsemi BC337

Name: onsemi BC337
Brand: onsemi
SKU: BC337

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

$ 0.077

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	BC337	510					0.092	0.077	0.068	12h
Avnet		BC337	0	4K							5d
element14 APAC		BC337	0	5			0.311*	0.161*	0.079*	0.070*	1d
Worldway Electronics		BC337	7,537	7	Bulk		0.009	0.009	0.009	0.009	12h
Anlinkda		BC337	117,310			0.094	0.084	0.072	0.071	0.068	20h

数据表和文档

下载 onsemi BC337 的数据表和制造商文档。

Upverter

Datasheet5 页16 年前

IHS

onsemi

Fairchild Semiconductor

Farnell

库存历史记录

3 个月趋势:

+0.00%

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备用零件

此零件

备用零件

onsemiBC337

onsemiBC337G

Price @ 1000

$ 0.077

$ 0.043

Stock

283,046

2,354,575

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

TO-92-3

Polarity

NPN

Collector Emitter Breakdown Voltage

45 V

Max Collector Current

800 mA

Transition Frequency

100 MHz

210 MHz

Collector Emitter Saturation Voltage

700 mV

hFE Min

100

Power Dissipation

1.5 W

625 mW

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-08-15

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2012-02-23

LTD Date2012-08-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi BC337 的描述。

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

IHS

Bulk Through Hole Single 1 Bipolar (BJT) Transistor 800mA 625mW 210MHz 50V

Fly-Wing Technology

Trans GP BJT NPN 45V 0.8A 3-Pin TO-92 Bulk

Verical

PNP Bipolar Transistor. ONSSPCTRNSTVU6M5P;

Avnet

Bipolar Transistor; Transistor Polarity:NPN; DC Current Gain Min (hfe):100; Package/Case:TO-92; C-E Breakdown Voltage:45V; DC Collector Current:0.8A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.

Fairchild Semiconductor

TRANSISTOR,NPN,45V,0.8A,TO92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:630; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:800mW; Termination Type:Through Hole; Voltage Vcbo:50V

element14 APAC