备用零件
Price @ 1000
$ 0.093
$ 0.067
$ 0.067
Stock
3,301,672
31,153,006
31,153,006
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-323
SOT-323
SOT-323
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
Threshold Voltage
1 V
2 V
2 V
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 mW
200 mW
200 mW
Input Capacitance
50 pF
50 pF
50 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi 2N7002W 的描述。
N-Channel 60 V 7.5 Ohm SMT Enhancement Field Effect Transistor SOT-23-3
N-Channel MOSFET, small signal 60V, 340mA, 1.6 Ohm, SC-70
Trans MOSFET N-CH 60V 0.115A 3-Pin SC-70 T/R / MOSFET N-CH 60V 115MA SOT-323
Power MOSFET, N Channel, 78 V, 115 mA, 2.53 ohm, SOT-323, Surface Mount
MOSFET, N-CH, 78V, 0.115A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:78V; On Resistance Rds(on):2.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.5 ns
Turn-On Delay Time5.85 ns
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm