供应链
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1974-07-02
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2010-06-03
LTD Date2010-12-03
相关零件
onsemiKSD1616LBU
Bulk Through Hole NPN KSD1616 Bipolar (BJT) Transistor 300 @ 100mA 2V 1A 750mW 160MHz
描述
由其分销商提供的 onsemi 2N5308 的描述。
Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans Darlington NPN 40V 1.2A 3-Pin TO-92 Bulk
NPN Darlington Transistor
NPN/DARLINGTON <AZ
Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):7000; Package/Case:TO-92; C-E Breakdown Voltage:40V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
2K/REEL LOC UC(TOP)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Body MaterialMetal
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1.4 V
Collector Emitter Voltage (VCEO)40 V
Current15 A
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)12 V
hFE Min7000
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency60 MHz
Voltage40 V
Voltage Rating (DC)40 V