备用零件
Price @ 1000
$ 0.023
$ 0.03
$ 0.03
Stock
56,861
315,035
315,035
Authorized Distributors
1
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
30 MHz
30 MHz
30 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
700 mV
hFE Min
250
250
250
Power Dissipation
625 mW
625 mW
625 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2019-04-18
LTD Date2019-10-18
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
描述
由其分销商提供的 onsemi 2N5210TFR 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100muA 5V 50nA ICBO 625mW 30MHz
2N5210 Series 50 V CE Breakdown 0.1 A NPN General Purpose Amplifier - TO-92
Transistor GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
TRANSISTOR NPN 100mA 50V hFE=250~600 TO-92
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4.5 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min250
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation620 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency30 MHz
Voltage Rating (DC)50 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm