备用零件
Price @ 1000
$ 0.081
$ 0.055
$ 0.055
Stock
861,224
838,985
838,985
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
-40 V
-40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-400 mV
-400 mV
-400 mV
hFE Min
30
30
30
Power Dissipation
625 mW
625 mW
625 mW
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi 2N3906TFR 的描述。
Transistor General Purpose BJT PNP 40 Volt 0.2 Amp 3-Pin TO-92 Tape and Reel
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
2N3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - TO-92
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
40V 625mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA PNP -55¡Í~+150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:100
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm