备用零件
Price @ 1000
$ 0.07
$ 0.048
$ 0.048
Stock
395,656
2,456,104
2,456,104
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
TO-92
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-400 mV
-400 mV
-400 mV
hFE Min
30
30
30
Power Dissipation
625 mW
625 mW
625 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi 2N3906TAR 的描述。
TRANS PNP 40V 0.2A TO92-3 / Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92-3
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
2N3906 Series 40 V 0.2 A PNP General Purpose Amplifier Through Hole - TO-92
Transistor 2N3906 PNP General Purpose (Tape/Reel/Ammo)
40V 625mW 200mA 100@10mA1V 250MHz PNP 400mV@50mA5mA -55¡Í~+150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
onsemi PNPTransistor, TO-92encapsulation, Through hole mounting, Maximum DC collector current-200 mA, maximum collector-emission voltage-40 V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm