备用零件
Price @ 1000
$ 0.061
$ 0.057
$ 0.057
Stock
1,659,549
9,163,076
9,163,076
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
650 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
625 mW
625 mW
625 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi 2N3904TAR 的描述。
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor General Purpose BJT NPN 40V 200mA TO-92-3 (Tape/Reel/Ammo)
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 10mA 1V 200mA 625mW 300MHz
Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 Fan-Fold
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~+150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN, 40V, 0.2A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Tra
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm