NXP Semiconductors PDTC114ET

Name: NXP Semiconductors PDTC114ET
Brand: NXP Semiconductors
SKU: PDTC114ET

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Production

制造商页面数据表

价格与库存

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Distributor	SKU		Min
UnikeyIC	PDTC114ET	27,000	3K					0.020	6h
Component Stockers USA	PDTC114ET	432		99.990	99.990	99.990	99.990	99.990	3d
Worldway Electronics	PDTC114ET	6,054	7		0.015	0.014	0.014	0.014	1d
Aztech	PDTC114ET	4,018		4.680	4.680	4.680	4.680	4.680	1d
Chipsmall Limited	PDTC114ET	1,480,000	1	0.097	0.064	0.039	0.032	0.032	1d

数据表和文档

下载 NXP Semiconductors PDTC114ET 的数据表和制造商文档。

IHS

Datasheet13 页3 年前

Datasheet0 页0 年前

Farnell

element14

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2004-06-30

描述

由其分销商提供的 NXP Semiconductors PDTC114ET 的描述。

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Semicontronic

50 V, 100 MILLI AMPERE NPN resistor-equipped transistor; R1 = 10 KILO OHM, R2 = 10 KILO OHM

Rebound Electronics

Trans Digital BJT NPN 50V 100mA 3-Pin TO-236AB

Verical

100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

Component Stockers USA

Bias Resistor Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Continuous Collector Current, Ic:100mA; Base Input Resistor, R1:10kohm ;RoHS Compliant: Yes

Newark

TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:150mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:5mA; Hfe Min:30; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:p/t16; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V

element14 APAC

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 30 / Power Dissipation (Pd) mW = 250 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 150 / Reflow Temperature Max. °C = 260 / Operating Frequency MHz = 230

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