价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FJV3114RMTF | 96,000 | 11279 | |||||||||
| Avnet | FJV3114RMTF | 477,920 | 1 | 2d | ||||||||
| Rochester Electronics | FJV3114RMTF | 96,000 | 23h | |||||||||
| Flip Electronics | FJV3114RMTF | 477,920 | 6d | |||||||||
| Win Source | WS-130767 | 2,470 | 1500 | 1d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-08-29
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FJV3114RMTF 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
68@5mA,5V 1 NPN - Pre Biased 200mW 100mA 50V 100nA SOT-23-3 Digital Transistors ROHS
NPN Epitaxial Silicon Transistor with Bias Resistor
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min68
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Transition Frequency250 MHz
Voltage Rating (DC)50 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm