供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
相关零件
STMicroelectronicsSTP14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220 package
描述
由其分销商提供的 NTE Electronics NTE2397 的描述。
Power Mosfet N-channel 400V Id=10A TO-220 Case High Speed Switch Enhancement Mode Rds=0.55 Ohm
NTE Electronics
N CHANNEL MOSFET, 400V, 10A, TO-220; Tra; N CHANNEL MOSFET, 400V, 10A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.55ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220
replacement Transistors TO-220 N-CH 400V 10A
MOSFET N-CHANNEL 400V 10A TO220
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET [NTE] NTE2397 MOSFET 768249384717
制造商别名
NTE Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。NTE Electronics 也可称为以下名称：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight72.574779 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation125 W
Recovery Time790 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)400 V
Dimensions
Height15.494 mm
Length10.668 mm
Width76.2 mm