供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-31
LTD Date2020-09-30
相关零件
STMicroelectronicsSTP18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP18N55M5
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package
描述
由其分销商提供的 Infineon IPP50R299CPXKSA1 的描述。
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Mosfet, N Channel, 550V, 12A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(On):0.27Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance299 mΩ
Package Quantity500
Power Dissipation104 W
Rds On Max299 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns