供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
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描述
由其分销商提供的 NTE Electronics NTE2373 的描述。
Power Mosfet P-channel 200V Id=11A TO-220 Case High Speed Switch Enhancement Mode Rds=0.5 Ohm
NTE Electronics
TRANSISTOR, MOSFET, PCHAN, 11A, 200V
replacement Transistors TO-220 P-CH 200V 11A
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CHANNEL 200V 11A TO220
P CHANNEL MOSFET, -200V, -11A TO-220; Tr; P CHANNEL MOSFET, -200V, -11A TO-220; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-
制造商别名
NTE Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。NTE Electronics 也可称为以下名称：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance500 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation125 W
Recovery Time300 ns
Threshold Voltage4 V