供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-06-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
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HIGH VOLTAGE, HIGH CURRENT ULN2004A DARLINGTON TRANSISTOR ARRAYS, 30V, 500mA, -40 to 105°C
Diodes Inc.ULN2002AD16-U
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描述
由其分销商提供的 NTE Electronics NTE2321 的描述。
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, QUAD, VCEO 30V, IC 500MA, PD 1.9W
Quad Transistor NPN Silicon 60V IC=0.5A 14-lead DIP
NTE Electronics
Power Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin
Trans GP BJT NPN 30V 0.5A 14-Pin DIP
TRANSISTOR,NPN,SI,QUAD GEN PUR 14-PIN DIP
Transistor; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:500Ma; Power Dissipation Pd:1.9W; Dc Current Gain Hfe:100Hfe; No. Of Pins:14Pins; Transistor Mounting:through Hole; Product Range:- Rohs Compliant: Yes
制造商别名
NTE Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。NTE Electronics 也可称为以下名称：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技术规格
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins14
Number of Terminals14
Weight72.574779 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)40 V
Emitter Base Voltage (VEBO)5 V
hFE Min30
Max Collector Current500 mA
Max Operating Temperature200 °C
Max Power Dissipation1.9 W
Min Operating Temperature-65 °C
Number of Elements4
PolarityNPN
Power Dissipation1.9 W
Schedule B8541290080
Transition Frequency350 MHz
Dimensions
Height5.08 mm
Length19.939 mm
Width7.62 mm