Nexperia PBSS302NX,115

Name: Nexperia PBSS302NX,115
Brand: Nexperia
SKU: PBSS302NX,115

PBSS302NX Series 20 V 5.3 A 1.65 W SMT NPN Low VCEsat (BISS) Transistor - SOT-89

$ 0.424

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制造商页面数据表

价格与库存

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Distributor		SKU		Min
Verical	6	PBSS302NX,115	4,000	653				0.530	0.473
Rochester Electronics	2	PBSS302NX,115	20,940				0.511	0.424	0.378	3h
TME	2	PBSS302NX.115	0	1	0.810	0.590	0.383	0.383	0.383	2h
Avnet		PBSS302NX,115	0	4K						3d
Component Stockers USA		PBSS302NX,115	17,399		0.160	0.200	0.190	0.170	0.170	7d

数据表和文档

下载 Nexperia PBSS302NX,115 的数据表和制造商文档。

Nexperia

Datasheet16 页16 年前

IHS

Farnell

库存历史记录

3 个月趋势:

+0.41%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.75

Introduction Date2006-08-25

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PBSS302NX,115 的描述。

PBSS302NX Series 20 V 5.3 A 1.65 W SMT NPN Low VCEsat (BISS) Transistor - SOT-89

Future Electronics

Trans GP BJT NPN 20V 5.3A 4-Pin(3+Tab) SOT-89 T/R

Verical

Power Bipolar Transistor, 5.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:20V; Transition Frequency Typ, ft:140MHz; Power Dissipation, Pd:2.1W; DC Collector Current:5.3A; DC Current Gain Max (hfe):570 ;RoHS Compliant: Yes

Newark

TRANS NPN 20V 5.3A SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Power Dissipation Pd:600mW; DC Collector Current:5.3A; DC Current Gain hFE:570; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:25mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)

element14 APAC