价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 31-ZXTN2005ZTACT-ND | 253 | 1 | Cut Tape | ||||||||
| TME | ZXTN2005ZTA | 0 | 1 | 22h | ||||||||
| Newark | ZXTN2005ZTA | 0 | 1 | Cut Tape | ||||||||
| Avnet | ZXTN2005ZTA | 0 | 1K | 2d | ||||||||
| Arrow Electronics | ZXTN2005ZTA | 0 | 1K |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.ZXTN19020DZTA
ZXTN19020DZ Series NPN 20 V 7.5 A High Gain Power Transistor SMT - SOT-89-3
Diodes Inc.ZXTN2007ZTA
Power Bipolar Transistor, 6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SD2098T100R
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
onsemiKSD1621RTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 100nA ICBO 500mW 150MHz
onsemiKSD1621TTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 500mW 150MHz
描述
由其分销商提供的 Diodes Inc. ZXTN2005ZTA 的描述。
Trans GP BJT NPN 25V 5.5A 4-Pin(3+Tab) SOT-89 T/R
Power Bipolar Transistor, 5.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans, Npn, 25V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2005ZTA
Bipolar Transistors - BJT 25V NPN Low Sat
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current5.5 A
Current Rating5.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min40
Max Breakdown Voltage25 V
Max Collector Current5.5 A
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation2.1 W
Schedule B8541290080
Transition Frequency150 MHz
Voltage Rating (DC)25 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm