数据表和文档
下载 Nexperia BCV47,215 的数据表和制造商文档。
官方数据表1 年前
备用零件
Price @ 1000
$ 0.104
$ 0.113
Stock
4,231,025
766,049
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
TO-236-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
Max Collector Current
500 mA
500 mA
Transition Frequency
220 MHz
220 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
10000
10000
Power Dissipation
250 mW
-
供应链
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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描述
由其分销商提供的 Nexperia BCV47,215 的描述。
BCV47 Series 60 V 500 mA SMT NPN Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
DARLINGTON TRANSISTOR, NPN, 60V, 500MA, 3-SOT-23, FULL REEL
Darlington Transistors, NPN, 60 V, 500 mA, 250 mW, 2000 hFE, 3 Pins, SOT-23 (TO-236AB)
500 mA 60 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
DARLINGTON TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:220MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:10000; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min10000
Max Breakdown Voltage60 V
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
Schedule B8541210080
Transition Frequency220 MHz
Dimensions
Height1 mm
Length3 mm