价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BC847BPN,115 | 147,000 | 3K | 23h | ||||||||
| Newark | BC847BPN,115 | 87 | 5 | Cut Tape | ||||||||
| Verical | BC847BPN,115 | 11,317 | 75 | |||||||||
| Arrow Electronics | BC847BPN,115 | 11,317 | 1 | |||||||||
| Future Electronics | BC847BPN,115 | 1,536,000 | 3K | Tape & Reel |
备用零件
Price @ 1000
$ 0.043
$ 0.11
$ 0.11
Stock
19,253,119
1,500,542
1,500,542
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SOT-666
SOT-666
Polarity
NPN, PNP
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
100 V
300 mV
300 mV
hFE Min
200
200
200
Power Dissipation
400 mW
300 mW
300 mW
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
相关零件
onsemiSBC847CDW1T1G
ON SEMI SBC847CDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Diodes Inc.DDC123JU-7-F
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
Diodes Inc.DDC114YU-7-F
DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6
ToshibaRN1905,LF(CT
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
描述
由其分销商提供的 Nexperia BC847BPN,115 的描述。
Bipolar Transistors (BJT); BC847BPN,115; NEXPERIA; NPN, PNP; 6; 45 V; 100 mA
Trans GP BJT NPN/PNP 45V 0.1A Automotive 6-Pin TSSOP
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
45 V, 100 mA NPN/PNP general-purpose transistor
Nexperia BC847BPN115 Transistor NPN-PNP dual 45V 100mA tape full reel
100 mA 45 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
General Purpose Transistors 45V 100mA NPN+PNP SOT363 200~450
NPN/PNP transistor,BC847BPN UMT6 100mA
TRANS NPN/PNP 45V 100MA 6TSSOP
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:220mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANSISTOR, NPN/PNP, DUAL , 45V, SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:220mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Transistor Polarity = NPN / Configuration = Dual Common Anode / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 220 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 755
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage100 V
Collector Emitter Voltage (VCEO)45 V
Current1 A
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation400 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm