Nexperia 2N7002BK,215

Name: Nexperia 2N7002BK,215
Brand: Nexperia
SKU: 2N7002BK,215

MOSFET, N CH, 60V, 1OHM, 350mA, TO-263AB-3; Transistor Polarity: N Channel; Conti

$ 0.049

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		2N7002BK,215	834,000	3K						0.029	3d
Newark	3	2N7002BK,215	125,547	1	Cut Tape	0.370	0.226	0.144	0.144	0.144
Arrow Electronics		2N7002BK,215	60,000	3K						0.027
Verical		2N7002BK,215	54,000	3K						0.027
Future Electronics		2N7002BK,215	918,000	3K	Tape & Reel					0.093

数据表和文档

下载 Nexperia 2N7002BK,215 的数据表和制造商文档。

IHS

Datasheet16 页15 年前

TME

库存历史记录

3 个月趋势:

Restocked

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Nexperia2N7002BK,215

Vishay2N7002K-T1-GE3

Price @ 1000

$ 0.049

$ 0.074

Stock

13,553,024

14,711,115

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT

SOT-23

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

350 mA

300 mA

Threshold Voltage

2 V

Rds On Max

1.6 Ω

2 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

440 mW

350 mW

Input Capacitance

50 pF

30 pF

供应链

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia 2N7002BK,215 的描述。

MOSFET, N CH, 60V, 1OHM, 350mA, TO-263AB-3; Transistor Polarity:N Channel; Conti

Newark

Power MOSFET, N Channel, 60 V, 350 mA, 1.6 Ohm, SOT-23, 3 Pins, Surface Mount

Avnet Silica

2N7002BK Series N-Channel 60 V 1.6 Ohm 370 mW 0.6 nC SMT TrenchMOS FET - SOT-23

Future Electronics

60V 350mA 1.6´Î@10V500mA 370mW 2.1V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Transistor MOSFET N-CH 60V 0.35A 3-Pin TO-236AB T/R

Avnet Japan

Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R

Verical

MOSFET, N-CH, 60V, 0.35A, SOT-23-3, REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.

Farnell

Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 350 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1.6 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.2

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