Microchip VN0300L-G

Name: Microchip VN0300L-G
Brand: Microchip
SKU: VN0300L-G

VN0300 Series 30 V 640 mA N-Channel Enhancement-Mode Vertical DMOS FET - TO92-3

$ 0.9

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Distributor	SKU		Min	Pkg
Newark	VN0300L-G	6	1		1.470	1.340	1.120	1.120	1.120
Avnet	VN0300L-G	1,000	1K					0.701	0.667	2d
Arrow Electronics	VN0300L-G	2,203	1		0.837	0.837	0.770	0.770	0.770
Onlinecomponents.com	VN0300L-G	1,000	25	Bulk			1.610	1.150	1.110
Master Electronics	VN0300L-G	1,000	25				1.610	1.150	1.110

数据表和文档

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Microchip

Datasheet3 页12 年前

Microchip SCT

Electro Sonic

Mouser

库存历史记录

3 个月趋势:

-33.43%

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供应链

Projected EOL Date2034-08-04

Country of AssemblyPhilippines

Country of FabricationUnited States of America

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.0095

Lifecycle StatusProduction (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)

描述

由其分销商提供的 Microchip VN0300L-G 的描述。

VN0300 Series 30 V 640 mA N-Channel Enhancement-Mode Vertical DMOS FET - TO92-3

Future Electronics

Transistor: N-MOSFET; unipolar; 30V; 1W; TO92; 1A

Fly-Wing Technology

Trans MOSFET N-CH Si 30V 0.64A 3-Pin TO-92 Bag

Verical

Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Semicontronic

Mosfet, N-Ch, 30 V, 0.64 A, To-92-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:640Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Microchip Technology VN0300L-G

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 640 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.2 / Gate-Source Voltage V = 30 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-92 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bag / Power Dissipation (Pd) W = 1

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