onsemi SSN1N45BTA

Name: onsemi SSN1N45BTA
Brand: onsemi
SKU: SSN1N45BTA

Power Mosfet, N-channel, B-fet, 450 V, 0.5 A, 4.25 Ω, TO-92

$ 0.292

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Verical		SSN1N45BTA	7,342	1486						0.225
Rochester Electronics		SSN1N45BTA	7,342					0.243	0.202	0.180	21h
DigiKey	2	SSN1N45BTACT-ND	33,713	1	Cut Tape	1.290	0.815	0.539	0.382	0.382
Flip Electronics		SSN1N45BTA	6,000								6d
Farnell		SSN1N45BTA	219	1		1.313*	0.829*	0.549*	0.549*	0.549*	21h

数据表和文档

下载 onsemi SSN1N45BTA 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Newark

onsemi

Fairchild Semiconductor

element14 APAC

库存历史记录

3 个月趋势:

-3.12%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi SSN1N45BTA 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-12-16

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi SSN1N45BTA 的描述。

Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92

onsemi

Small Signal Field-Effect Transistor, 0.5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

IHS

MOSFET, N-CH, 450V, 0.5A, TO-226AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 450V; On Resistance Rds(on): 3.4; Available until stocks are exhausted Alternative available

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

Fairchild Semiconductor