供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonIPD80R1K4P7ATMA1
Power MOSFET, N Channel, 800 V, 4 A, 1.4 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
描述
由其分销商提供的 Littelfuse IXTY01N100D 的描述。
Single N-Channel 1000 V 110 Ohm 25 W Power Mosfet - TO-252AA
Trans MOSFET N-CH Si 1KV 3-Pin(2+Tab) DPAK / MOSFET N-CH 1000V 0.1A TO-252AA
Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, N-Ch, 1Kv, 0.4A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:400Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Ixys Semiconductor IXTY01N100D
制造商别名
Littelfuse 在全球拥有多个品牌，分销商可将其用作替代名称。Littelfuse 也可称为以下名称：
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)100 mA
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance80 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)-4.5 V
Input Capacitance120 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.1 W
Rds On Max80 Ω
Resistance110 Ω
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time30 ns