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描述
由其分销商提供的 Littelfuse IXBH24N170 的描述。
Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH24N170
High Voltage Series - 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs, TO-247, RoHS
Littelfuse SCT
Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
2.5V@ 15V,24A 60A TO-247AD 16.05mm*5.1mm*21.46mm
High Voltage, High Gain Bipolar MOS Transistor
制造商别名
Littelfuse 在全球拥有多个品牌，分销商可将其用作替代名称。Littelfuse 也可称为以下名称：
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)1.7 kV
Collector Emitter Breakdown Voltage1.7 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.7 kV
Continuous Collector Current60 A
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)30 V
Max Collector Current60 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Reverse Recovery Time1.06 µs
Rise Time28 ns
Turn-Off Delay Time315 ns
Turn-On Delay Time33 ns
Dimensions
Height25.96 mm