Infineon SPP20N60CFDXKSA1

Name: Infineon SPP20N60CFDXKSA1
Brand: Infineon
SKU: SPP20N60CFDXKSA1

Transistor MOSFET N-Channel 650V 20.7A 3-Pin TO-220

$ 2.13

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	SPP20N60CFDXKSA1	100	1		5.530	3.840	3.152	3.152	3.152
Rochester Electronics		SPP20N60CFDXKSA1	2,038					1.810	1.620	1.520	3h
Avnet		SPP20N60CFDXKSA1	0	500					1.885	1.798	5h
Future Electronics		SPP20N60CFDXKSA1	0	500	Tube				2.930	2.870
Mouser		726-SPP20N60CFDXKSA1	105	1	Tube	4.200	3.040	2.610	2.050	2.050

数据表和文档

下载 Infineon SPP20N60CFDXKSA1 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet12 页21 年前

Newark

iiiC

Farnell

库存历史记录

3 个月趋势:

-5.85%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-12-23

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon SPP20N60CFDXKSA1 的描述。

Transistor MOSFET N-Channel 650V 20.7A 3-Pin TO-220

EBV Elektronik

Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB Tube

Verical

650V 20.7A 208W 220m´Î@10V13.1A 5V@1mA N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

Infineon