Infineon SPD15P10PGBTMA1

Name: Infineon SPD15P10PGBTMA1
Brand: Infineon
SKU: SPD15P10PGBTMA1

Single P-Channel 100 V 240 mOhm 37 nC SIPMOS® Power Mosfet - DPAK

$ 0.789

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		SPD15P10PGBTMA1	1,490	1		2.060	1.390	1.070	0.842	0.714
Arrow Electronics		SPD15P10PGBTMA1	2,300	1		2.039	2.039	2.039	2.039	2.039
DigiKey	2	SPD15P10PGBTMA1CT-ND	1,031	1	Cut Tape	2.180	1.396	0.948	0.729	0.729
Rochester Electronics		SPD15P10PGBTMA1	2,500								8h
Future Electronics		SPD15P10PGBTMA1	0	2500	Tape & Reel					0.575

数据表和文档

下载 Infineon SPD15P10PGBTMA1 的数据表和制造商文档。

IHS

Datasheet10 页19 年前

iiiC

库存历史记录

3 个月趋势:

-52.25%

CAD 模型

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-11-13

Lifecycle StatusNRND (Last Updated: 3 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon SPD15P10PGBTMA1 的描述。

Single P-Channel 100 V 240 mOhm 37 nC SIPMOS® Power Mosfet - DPAK

Future Electronics

Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, P-CH, 100V, 15A, TO252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:128W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Farnell

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon