Infineon IPD65R225C7ATMA1

Name: Infineon IPD65R225C7ATMA1
Brand: Infineon
SKU: IPD65R225C7ATMA1

MOSFET Transistor, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

$ 1.061

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Distributor		SKU		Min	Pkg
Avnet		IPD65R225C7ATMA1	2,500	2500						0.922	7h
Newark		IPD65R225C7ATMA1	2,331	1		2.930	1.760	1.280	1.000	0.922
Arrow Electronics	3	IPD65R225C7ATMA1	4,882	1		2.936	2.936	2.936	2.936	2.936
Future Electronics	2	IPD65R225C7ATMA1	10,000	2500	Tape & Reel					1.010
Rochester Electronics		IPD65R225C7ATMA1	6,080					1.200	0.996	0.888	5h

数据表和文档

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Upverter

Datasheet15 页0 年前

IHS

库存历史记录

3 个月趋势:

+29.14%

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-04-18

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IPD65R225C7ATMA1 的描述。

MOSFET Transistor, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

Newark

Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 650V, 11A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.199ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

Farnell

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon