Infineon SPD09P06PLGBTMA1

Name: Infineon SPD09P06PLGBTMA1
Brand: Infineon
SKU: SPD09P06PLGBTMA1

Single P-Channel 60 V 250 mOhm 14 nC SIPMOS® Power Mosfet - DPAK

$ 0.377

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	SPD09P06PLGBTMA1	1,955	5	Cut Tape		0.819	0.542	0.485	0.485
Arrow Electronics	2	SPD09P06PLGBTMA1	5,391	1		0.337	0.337	0.337	0.337	0.337
Rochester Electronics		SPD09P06PLGBTMA1	10,465					0.386	0.321	0.286	9h
DigiKey	3	SPD09P06PLGBTMA1CT-ND	7,474	1	Cut Tape	1.280	0.808	0.533	0.377	0.350
Avnet		SPD09P06PLGBTMA1	0	2500							11h

数据表和文档

下载 Infineon SPD09P06PLGBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页18 年前

iiiC

库存历史记录

3 个月趋势:

-20.83%

CAD 模型

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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-19

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon SPD09P06PLGBTMA1 的描述。

Single P-Channel 60 V 250 mOhm 14 nC SIPMOS® Power Mosfet - DPAK

Future Electronics

Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB

ComSIT Distribution GmbH

MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.

element14 APAC

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon