Infineon SPD08P06PGBTMA1

Name: Infineon SPD08P06PGBTMA1
Brand: Infineon
SKU: SPD08P06PGBTMA1

MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity: P Channel; Continuous Drain

$ 0.315

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min
Avnet	2	47W3758	4,926	1	1.090	0.736	0.495	0.348	0.294	1d
Newark		SPD08P06PGBTMA1	4,926	1	0.282	0.282	0.282	0.282	0.282
Arrow Electronics	2	SPD08P06PGBTMA1	2,562	1	0.915	0.641	0.436	0.245	0.245
Rutronik		TMOSP7738	7,500	2500					0.260	7h
Rochester Electronics		SPD08P06PGBTMA1	9,191				0.338	0.280	0.250	1d

数据表和文档

下载 Infineon SPD08P06PGBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页19 年前

_legacy Avnet

库存历史记录

3 个月趋势:

-48.05%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-06-01

Lifecycle StatusNRND (Last Updated: 3 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon SPD08P06PGBTMA1 的描述。

MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain

Newark

Single P-Channel 60 V 300 mOhm 10 nC SIPMOS® Power Mosfet - TO-252-3

Future Electronics

SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

ComSIT Distribution GmbH

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon

MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.83A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:-6.2V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Farnell