Infineon SPD04P10PGBTMA1

Name: Infineon SPD04P10PGBTMA1
Brand: Infineon
SKU: SPD04P10PGBTMA1

MOSFET, P-CH, 100V, 4A, TO-252; Available until stocks are exhausted Alternative available

$ 0.296

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		SPD04P10PGBTMA1	2,500	1		0.296	0.296	0.296	0.296	0.296
Rochester Electronics		SPD04P10PGBTMA1	37,815								6h
Avnet		SPD04P10PGBTMA1	0	2500							1d
Farnell	2	SPD04P10PGBTMA1	3,553	1	Cut Tape	1.115*	0.746*	0.600*	0.403*	0.403*	5h
Microchip USA		SPD04P10PGBTMA1	186	600					2.337	2.337	22h

数据表和文档

下载 Infineon SPD04P10PGBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页19 年前

库存历史记录

3 个月趋势:

-5.37%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-05-15

LTD Date2024-11-15

描述

由其分销商提供的 Infineon SPD04P10PGBTMA1 的描述。

MOSFET, P-CH, 100V, 4A, TO-252; Available until stocks are exhausted Alternative available

Farnell

Mosfet, P-Ch, 100V, 4A, To-252 Rohs Compliant: Yes |Infineon SPD04P10PGBTMA1

Newark

Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon